MODELING OF VOID FORMATION DURING THE PROCESS OF REACTION DIFFUSION IN A BINARY SYSTEM

Л. І. Колісник, С. В. Корнієнко

Abstract


Numerous experiments demonstrate that processes of reaction diffusion are followed by void formation quite often. At the interdiffusion and reaction diffusion which happens on the vacancy atomic diffusion mechanism, the inequality of atoms fluxes is caused by their differential mobility, give rise to a directional flux of vacancies. This flux of vacancies causes an appearance of areas in a diffusion zone with supersaturation and deficiency in vacancies, where sinks / sources of non-equilibrium vacancies act. Dislocations, interphase and grain borders, microvoids may be sinks / sources of non-equilibrium vacancies. Therefore voids may be considered as a sinks of non-equilibrium vacancies that act in the area of a diffusion zone where there is vacancy supersaturation during modeling of reaction diffusion. The model of void formation for a binary system during the process of reaction diffusion is suggested. This model allows to investigate the kinetics of void growth, and their motion in a volume of sample. The model takes into account the effect of sources / sinks of non-equilibrium vacancies on void formation in different parts of diffusion zone. The numerical modeling has shown that the better work effectivity of vacancies sources/sinks, the more rapid growth of voids. At the same time the cube of void radius has linear dependence on time. Maximal size of void also depends on efficiency of vacancies sources / sinks.


Keywords


reaction diffusion; binary system; nonequilibrium vacancies; sources/sinks of vacancies; void formation

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