Main Article Content

Є. В. Татарчук


For modern gadgets and other microelectronic devices, the main requirement is their reliability. One of the reasons of the failure is the overheating of the equipment and the further degradation of the solder contacts. This process is induced by the formation of pores in the intermediate ε-Cu3Sn phase, which is formed during heating of the copper-tin contact. It should be noted that not only overheating leads to the degradation of the solder contact, but also the electric current through the contact.

There were many studies to determine the factors that supress the growth of pores in the ε-Cu3Sn phase, as well as the growth of this phase. One of such factor is the addition of zinc or nickel to the solder on the tin base. The addition of a microscopic layer of nickel to the boundary between copper and tin was also investigated.

The kinetics of phase growth in the Cu-Ni-Sn system under isothermal annealing at 340°C is investigated. The study of this three-component system is relevant, since pores can form at the Cu-Sn interface, which affect the contact properties and can serve as places of occurrence of defects (pores).

It should be noted that the thickness of the phases correlates with the number of pores formed and their size. Therefore, the study of the diffusion reaction in the Cu-Sn system with the addition of another component is one of the ways to inhibit the growth of the Cu6Sn5 + Cu3Sn phases. In the paper, the thickness of the Cu3Sn + Cu6Sn5 phase layer was inestigated at different annealing times at a temperature of 340°C. The total annealing time was 10 hours. It is shown that at a certain thickness of the deposited nickel, the growth of the ε-Cu3Sn phase almost completely stops. On the basis of the obtained experimental data, the dependences of the phase thickness on the annealing time for different initial thicknesses of the nickel layer are presented. It is shown that the thickness of the nickel layer significantly affects the growth kinetics of the Cu3Sn + Cu6Sn5 phase layer.

Article Details

Materials Physics
Author Biography

Є. В. Татарчук, The Bohdan Khmelnytsky National University of Cherkasy, Cherkasy, Ukraine

Candidate of physical and mathematical sciences, associate professor


Wang, S. J., & Liu, C. Y. (2003). Study of interaction between Cu-Sn and Ni-Sn interfacial reactions by Ni-Sn3. 5Ag-Cu sandwich structure. Journal of electronic materials, 32(11), 1303-1309. Retrieved from:

Baheti, V. A., Kashyap, S., Kumar, P., Chattopadhyay, K., & Paul, A. (2017). Bifurcation of the Kirkendall marker plane and the role of Ni and other impurities on the growth of Kirkendall voids in the Cu–Sn system. Acta Materialia, 131, 260-270. Retrieved from:

Turlo, V. V., Gusak, A. M., & Tu, K. N. (2013). Model of phase separation and of morphology evolution in two-phase alloy. Philosophical Magazine, 93(16), 2013-2025. Retrieved from:

Yu, C., Yang, Y., Chen, J., Xu, J., Chen, J., & Lu, H. (2014). Effect of deposit thickness during electroplating on Kirkendall voiding at Sn/Cu joints. Materials Letters, 128, 9-11. Retrieved from:

Y. V. Tatarchuk, Galat I. G. (2015) Influence of copper grain size on phase growth rate in Cu-Sn system. Bulletin of Cherkasy University. Series: Physical and Mathematical Sciences, 16, 73–80. Retrieved from:

Liu, Y., Pu, L., Gusak, A., Zhao, X., Tan, C., & Tu, K. N. (2020). Ultra-thin intermetallic compound formation in microbump technology by the control of a low Zn concentration in solder. Materialia, 12, 100791. Retrieved from: Режим доступу:

Yang, S. C., Ho, C. E., Chang, C. W., & Kao, C. R. (2006). Strong Zn concentration effect on the soldering reactions between Sn-based solders and Cu. Journal of materials research, 21(10), 2436-2439. Retrieved from